Abstract
This paper describes a femtosecond laser based on Yb:KYW with direct pumping by a
semiconductor injection laser. The Yb:KYW laser crystal was pumped longitudinally with
the radiation of an InGaAs semiconductor injection laser with fiber output of the
radiation. The spatial structure of the radiation of the semiconductor laser was
reshaped by a lens-based optical system in order to maximize its power concentration in
the volume of the laser medium. Femtosecond pulses were generated in the longitudinal
mode-locking regime by using a semiconductor saturable absorber. The generator's mean
power exceeded 1W at the central wavelength of 1043nm, with a pulse about 90fs wide. The
master oscillator thus developed can be used both as a self-contained source of
femtosecond light pulses and as a priming source for femtosecond laser amplifier
systems.
© 2010 Optical Society of America
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